p-channel enhancement mode vertical dmos fet issue 2 ? march 94 features * 450 volt v ds *r ds(on) =150 w absolute maximum ratings. parameter symbol value unit drain-source voltage v ds -450 v continuous drain current at t amb =25c i d -45 ma pulsed drain current i dm -400 ma gate source voltage v gs 20 v power dissipation at t amb =25c p tot 700 mw operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol min. max. unit conditions. drain-source breakdown voltage bv dss -450 v i d =-1ma, v gs =0v gate-source threshold voltage v gs(th) -1.5 -4.5 v id=-1ma, v ds = v gs gate-body leakage i gss 20 na v gs = 20v, v ds =0v zero gate voltage drain current i dss -20 -2 m a ma v ds =-450 v, v gs =0 v ds =-360 v, v gs =0v, t=125c (2) on-state drain current(1) i d(on) -100 ma v ds =-25 v, v gs =-10v static drain-source on-state resistance (1) r ds(on) 150 w v gs =-10v,i d =-50ma forward transconductance (1)(2) g fs 40 ms v ds =-25v,i d =-50ma input capacitance (2) c iss 120 pf common source output capacitance (2) c oss 20 pf v ds =-25 v, v gs =0v, f=1mhz reverse transfer capacitance (2) c rss 5pf turn-on delay time (2)(3) t d(on) 10 ns v dd ? -25v, i d =-50ma rise time (2)(3) t r 15 ns turn-off delay time (2)(3) t d(off) 15 ns fall time (2)(3) t f 20 ns (1) measured under pulsed conditions. width=300 m s. duty cycle 2% (2) sample test. ( 3 e-line to92 compatible ZVP0545A 3-413 d g s
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